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Secondary Worlds

by W. H. Auden

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421592,008 (3.25)1
This volume is a collection of 96 papers presented at the above Conference. The scope of the work includes optical and electrical methods as well as techniques for structural and compositional characterization. The contributed papers report on topics such as X-ray diffraction, TEM, depth profiling, photoluminescence, Raman scattering and various electrical methods. Of particular interest are combinations of different techniques providing complementary information. The compound semiconductors reviewed belong mainly to the III-V and III-VI families. The papers in this volume will provide a useful reference on the implications of new technologies in the characterization of compound semiconductors.… (more)
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In February 1993, I bought two small volumes of lectures / essays by W.H. Auden. I was very happy to read The enchafèd flood, or the Romantic iconography of the sea, which appeared in the series of Page-Barbour Lectures at the University of Virginia (1949). The enchafèd flood, or the Romantic iconography of the sea is of particular interest to readers of Melville's Moby Dick, which I was reading at the time, in 2014. Auden brings together a store of ideas on how to read Moby Dick at a symbolic level, such as pointing out the significance of the number and the names of the nine ships the Pequod encounters before hunting down the whale.

I was much less taken with Secondary Worlds, the T.S. Eliot memorial lectures delivered at Eliot College in the University of Kent at Canterbury, October 1967. These four lectures are about drama, particularly that of T.S. Eliot, Icelandic sagas and Opera. The fourth essay is about language. The lacture about opera is more specifically about Auden's own activities as a writer of libretto's. While all essays demonstrate Auden's great erudition, I was not really interested in any of these topics, apart from a moderate interest in T.S. Eliot. ( )
  edwinbcn | Dec 22, 2021 |
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This volume is a collection of 96 papers presented at the above Conference. The scope of the work includes optical and electrical methods as well as techniques for structural and compositional characterization. The contributed papers report on topics such as X-ray diffraction, TEM, depth profiling, photoluminescence, Raman scattering and various electrical methods. Of particular interest are combinations of different techniques providing complementary information. The compound semiconductors reviewed belong mainly to the III-V and III-VI families. The papers in this volume will provide a useful reference on the implications of new technologies in the characterization of compound semiconductors.

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